Erratum: Optical properties of nearly stacking-fault-free m -plane GaN homoepitaxial films grown by metal organic vapor phase epitaxy on low defect density free-standing GaN substrates (Applied Physics Letters (2008) 92 (091912))

Applied Physics Letters

Volumn 93, Issue 12, 2008, Pages

  Chichibu, S F ^a,b   Yamaguchi, H ^b   Zhao, L ^b   Kubota, M ^b,c   Okamoto, K ^c   Ohta, H ^c  

^a TOHOKU UNIVERSITY   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c ROHM CO LTD   (Japan)

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EID: 52949142191     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2991440     Document Type: Erratum

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