SiC nanowires: Material and devices

Journal of Physics D: Applied Physics

Volumn 44, Issue 13, 2011, Pages

  Zekentes, K ^a   Rogdakis, K ^a  

^a INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL MATERIALS; FIELD EMISSION APPLICATION; GROWTH MECHANISMS; LOW DIMENSIONALITY; PHYSICAL CHARACTERIZATION; PLANAR DEFECT; REINFORCING MATERIALS; SCIENTIFIC STUDIES; SI SURFACES; SIC NANOWIRE; UNINTENTIONAL DOPING;

FIELD EFFECT TRANSISTORS; SILICON CARBIDE; STRUCTURE (COMPOSITION);

NANOWIRES;

EID: 79952964014     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/13/133001     Document Type: Review

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