Thermoelectric properties of SiC thick films deposited by thermal plasma physical vapor deposition

Science and Technology of Advanced Materials

Volumn 4, Issue 2, 2003, Pages 167-172

  Wang, X H ^a   Yamamoto, A ^b   Eguchi, K ^a   Obara, H ^b   Yoshida, T ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Silicon carbide; Thermal plasma physical vapor deposition; Thermoelectric properties

Indexed keywords

ELECTRIC CONDUCTIVITY; PHYSICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; THICK FILMS;

THERMAL PLASMA PHYSICAL VAPOR DEPOSITION;

SILICON CARBIDE;

EID: 0037841868     PISSN: 14686996     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1468-6996(03)00015-9     Document Type: Article

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