Thermal properties of β-SiC epitaxial layers between 150 °C and 500 °C measured by using microstructures

Diamond and Related Materials

Volumn 6, Issue 10, 1997, Pages 1338-1341

  Wagner, C ^a   Krotz G ^a  

^a DAIMLER AG   (Germany)

Author keywords

Heat diffusion; High temperature; SiC; Thermal conductivity

Indexed keywords

EID: 0042227433     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(97)00109-X     Document Type: Article

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