Low-temperature in situ large strain plasticity of ceramic SiC nanowires and its atomic-scale mechanism

Nano Letters

Volumn 7, Issue 2, 2007, Pages 452-457

  Zhang, Z ^a   Han, X D ^a   Zhang, Y F ^a   Zheng, K ^a   Zhang, X N ^a   Hao, Y J ^b   Guo, X Y ^b   Yuan, J ^c   Wang, Z L ^d  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

^b INSTITUTE OF COAL CHEMISTRY   (China)

^c TSINGHUA UNIVERSITY   (China)

^d Georgia Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CERAMIC NANOMATERIALS; DISLOCATION DENSITY; LATTICE DISTORTION; NANOSCALE FRACTURE;

BAND STRUCTURE; CERAMIC MATERIALS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LOW TEMPERATURE EFFECTS; SILICON CARBIDE; STRAIN; SUPERPLASTICITY;

NANOWIRES;

INORGANIC COMPOUND; NANOWIRE; SILICON CARBIDE; SILICON DERIVATIVE;

ARTICLE; CERAMICS; CHEMISTRY; ELASTICITY; ELECTRON MICROSCOPY; MECHANICAL STRESS; NANOTECHNOLOGY; SPECTROSCOPY; TEMPERATURE; ULTRASTRUCTURE;

CARBON COMPOUNDS, INORGANIC; CERAMICS; ELASTICITY; MICROSCOPY, ELECTRON; NANOTECHNOLOGY; NANOWIRES; SILICON COMPOUNDS; SPECTRUM ANALYSIS; STRESS, MECHANICAL; TEMPERATURE;

EID: 33847715578     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl0627689     Document Type: Article

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