Focused ion beam-assisted manipulation of single and double β-SiC nanowires and their thermal conductivity measurements by the four-point-probe 3-ω method

Nanotechnology

Volumn 21, Issue 12, 2010, Pages

  Lee, K M ^a   Choi, T Y ^b   Lee, S K ^c   Poulikakos, D ^d  

^a UNIVERSITY OF NORTH TEXAS   (United States)

^b Center for Advanced Research and Technology   (United States)

^c Chonbuk National University   (South Korea)

^d ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

FOUR POINT PROBE; NANO MANIPULATOR; NANO-SCALE MATERIALS; ONE DIMENSIONAL (1D) NANOSTRUCTURES; PATTERNED ELECTRODE; SIC NANOWIRE; THERMAL CONDUCTIVITY MEASUREMENTS;

CARBON FIBER REINFORCED PLASTICS; FOCUSED ION BEAMS; NANOWIRES; PROBES; THERMAL CONDUCTIVITY; THERMOANALYSIS;

SILICON CARBIDE;

EID: 77949381448     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/12/125301     Document Type: Article

References (21)

1. Casady J B and Johnson R W 1996 Solid-State Electron. 39 1409
2. Wong E W, Sheehan P E and Lieber C M 1997 Science 277 1971
3. Liang C H, Meng G W, Zhang L D, Wu Y C and Cui Z 2000 Chem. Phys. Lett. 329 323
4. Shenai K, Scott R S and Baliga B J 1989 IEEE Trans. Electron Devices 36 1811-23
5. Dai H J, Wong E W, Lu Y Z, Fan S S and Lieber C M 1995 Nature 375 769
6. Li Z J, Li H J, Chen X L, Meng A L, Li K Z, Xu Y P and Dai L 2003 Appl. Phys. A 76 637
7. Rogdakis K, Lee S Y, Bescond M, Lee S K, Bano E and Zekentes K 2008 IEEE Trans. Electron Devices 55 1970-6
8. Liu Y, Chung J, Liu W K and Ruoff R S 2006 J. Phys. Chem. B 110 14098-106
9. Chung J, Lee K, Lee J and Ruoff R S 2004 Langmuir 20 3011-7
10. Boote J J and Evans S D 2005 Nanotechnology 16 1500-5
11. Schwamb T, Choi T Y, Schirmer N, Bieri N R, Burg B, Tharian J, Sennhauser U and Poulikakos D 2007 Nano Lett. 7 3633
12. Seong H, Choi H, Lee S, Lee J and Choi D 2004 Appl. Phys. Lett. 85 1256
13. Madelung O (ed) 1982 Landolt-Bornstein Numerical Data and Functional Relationships in Science and Technology (Landolt-Bornstein New Series Group III vol 17) (Berlin: Springer)
14. Wong E W, Sheehan P E and Lieber C M 1997 Science 277 1971
15. Yan B, Zhou G, Duan W, Wu J and Gu B 2006 Appl. Phys. Lett. 89 023104
16. Gopal V, Radmilovic V R, Daraio C, Jin S, Yang P and Stach E A 2004 Nano Lett. 4 2059
17. Choi T Y, Poulikakos D, Tharian J and Sennhauser U 2005 Appl. Phys. Lett. 87 013108
18. Choi T Y, Poulikakos D, Tharian J and Sennhauser U 2006 Nano Lett. 6 1589-93
19. Yi W, Lu L, Dian-lin Z, Pan Z W and Xie S 1999 Phys. Rev. B 59 R9015
20. Li J, Porter L and Yip S 1998 J. Nucl. Mater. 255 139-52
21. Takahashi K, Ito Y, Ikuta T, Nishiyama T, Fujii M, Zhang X and Huczko A 2008 High Temp.-High Press. 37 119-25