SCOPUS 정보 검색 플랫폼

Volumn 203, Issue 17-18, 2009, Pages 2625-2627

Effects of microwave annealing on crystalline quality of ion-implanted SiC epitaxial layers

(6) Mahadik, Nadeemullah A a Qadri, Syed B b Sundaresan, Siddarth G a Rao, Mulpuri V a Tian, Yonglai c Zhang, Qingchun d

a George Mason University (United States)

b NAVAL RESEARCH LABORATORY (United States)

c L T Technologies (United States)

d Arkansas Power Electronics International Inc (United States)

Author keywords

Microwave annealing; Silicon Carbide; X ray diffraction

Indexed keywords

4H-SILICON CARBIDES; ANNEALED SAMPLES; AS-GROWN; BEFORE AND AFTER; CONVENTIONAL FURNACES; CRYSTALLINE QUALITIES; HIGH RESOLUTIONS; ION-IMPLANTATION; MICROWAVE ABSORPTIONS; MICROWAVE ANNEALING; ROCKING CURVES; SIC EPILAYERS; TEMPERATURE RANGES; ULTRA FASTS; X-RAY ROCKING CURVES;

ALUMINUM; ANNEALING; CRYSTALLINE MATERIALS; DIFFRACTION; EPILAYERS; EPITAXIAL LAYERS; FULL WIDTH AT HALF MAXIMUM; IONS; MICROWAVE HEATING; MICROWAVES; SILICON CARBIDE; X RAY DIFFRACTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 67349181654 PISSN: 02578972 EISSN: None Source Type: Journal
DOI: 10.1016/j.surfcoat.2009.02.081 Document Type: Article

Times cited : (10)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.