Theoretical comparison of 3C-SiC and Si nanowire FETs in ballistic and diffusive regimes

Nanotechnology

Volumn 18, Issue 47, 2007, Pages

  Rogdakis, Konstantinos ^a,b   Bescond, Marc ^a   Bano, Edwige ^a   Zekentes, Konstantinos ^b  

^a IMEP LAHC   (France)

^b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; GREEN'S FUNCTION; NANOWIRES; SILICON CARBIDE;

CHANNEL LENGTH; DRIFT DIFFUSION MODELS; SUBTHRESHOLD SLOPE;

FIELD EFFECT TRANSISTORS;

NANOMATERIAL; NANOWIRE; SILICON; SILICON CARBIDE;

ARTICLE; BALLISTICS; COMPARATIVE STUDY; FIELD EFFECT TRANSISTOR; MATERIALS TESTING; MATHEMATICAL MODEL; PRIORITY JOURNAL; THEORETICAL STUDY;

EID: 35748931750     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/47/475715     Document Type: Article

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