Effect of Source and Drain contacts Schottky Barrier on 3C-SiC nanowire FETs I-V characteristics

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 235-238

  Rogdakis, Konstantinos ^a,b   Lee, Seoung Yong ^c   Kim, Dong Joo ^c   Lee, Sang Kwon ^c   Bano, Edwige ^a   Zekentes, Konstantinos ^b  

^a IMEP LAHC   (France)

^b INSTITUTE OF COMPUTER SCIENCE   (Greece)

^c Chonbuk National University   (South Korea)

Author keywords

3C SiC; FET; Nanowire; Schottky contacts; Simulation

Indexed keywords

NANOWIRES; SCHOTTKY BARRIER DIODES; SILICON CARBIDE;

3C-SIC; ELECTRICAL MEASUREMENT; IV CHARACTERISTICS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; SIMULATION; SOURCE AND DRAINS;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 79251555678     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.235     Document Type: Conference Paper

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