Heat, speed and error limits of Moore's law at the nano scales

Fluctuation and Noise Letters

Volumn 6, Issue 2, 2006, Pages

  Li, Yingfeng ^a   Kish, Laszlo B ^a  

^a Texas AandM University   (United States)

Author keywords

Leakage current; Moore's law; Power dissipation; Semiconductor device breakdown; Semiconductor device noise

Indexed keywords

EID: 33646482231     PISSN: 02194775     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0219477506003215     Document Type: Article

References (8)

1. G. E. Moore, Cramming more components onto integrated circuits, Electronics 38(8) (1965).
2. G. E. Moore, No exponential is forever ... but we can delay "forever", presentation at the International Solid State Circuits Conference (ISSCC) (February 3, 2003).
3. L. B. Kish, End of Moore's law: thermal (noise) death of integration in micro and nano electronics, Phys. Lett. A 305 (2002) 144-149.
4. R. Cavin, Plenary talk at the 3rd SPIE Symposium on Fluctuations and Noise, Austin, Texas, May 24-26, 2005.
5. L. B. Kish, Moore's law and the energy requirement of computing versus performance, in IEE Proc. -Circ. Dev. Syst. 151 (2004) 190-194.
6. J. C. Ranuarez, M. J. Deen and C.-H. Chen, A review of gate tunneling current in MOS devices, Microelectronics Reliability (Accepted for publication in October 2005).
7. International Technology Roadmap for Semiconductors, http://public.itrs. net.
8. J. Gea-Banacloche and L. B. Kish, Future directions in electronic computing and information processing, in Proc. of IEEE 93(10) (2005), pp. 1858-1863.