Fabrication and electrical transport properties of CVD grown silicon carbide nanowires (SiC NWs) for field effect transistor

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 771-774

  Seong, Han Kyu ^a   Lee, Seung Yong ^b   Choi, Heon Jin ^a   Kim, Tae Hong ^b   Cho, Nam Kyu ^b   Nahm, Kee Suk ^b   Lee, Sang Kwon ^b  

^a Yonsei University   (South Korea)

^b Chonbuk National University   (South Korea)

Author keywords

E beam lithography; Field effect transistor; Nanowires; Sensors

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRON BEAM LITHOGRAPHY; FIELD EFFECT TRANSISTORS; PHOTOLITHOGRAPHY; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; THERMAL EVAPORATION;

ELECTRICAL TRANSPORT MEASUREMENTS; METAL DEPOSITION;

NANOWIRES;

EID: 35748972135     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.771     Document Type: Conference Paper

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