Gas source molecular beam epitaxy of β-SiC on Si substrates

Applied Surface Science

Volumn 102, Issue , 1996, Pages 22-27

  Zekentes, K ^a   Becourt N ^a   Androulidaki, M ^a   Tsagaraki, K ^a   Stoemenos, J ^b   Bluet, J M ^c   Camassel, J ^c   Pascual, J ^d  

^a INSTITUTE OF COMPUTER SCIENCE   (Greece)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^c UNIV MONTPELLIER   (France)

^d UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROCARBONS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACES; TRANSMISSION ELECTRON MICROSCOPY;

GAS BEAMS; GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE); SILICON FLUXES; SUBSTRATE TEMPERATURES;

SEMICONDUCTING FILMS;

EID: 0030564793     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00012-8     Document Type: Article

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