Self-aligned III-V MOSFETs heterointegrated on a 200 mm Si substrate using an industry standard process flow

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Hill, R J W ^a   Park, C ^a   Barnett, J ^a   Price, J ^a   Huang, J ^a   Goel, N ^a   Loh, W Y ^a   Oh, J ^a   Smith, C E ^a   Kirsch, P ^a   Majhi, P ^a   Jammy, R ^a  

^a SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPATIBLE PROCESS; DRIVE CURRENTS; FABRICATION LINES; III-V MOSFET; INDUSTRY STANDARDS; INTRINSIC TRANSCONDUCTANCE; LARGE DIAMETER; MOSFETS; OHMIC METALS; PROCESS FLOWS; SELF-ALIGNED; SI DEVICES; SI SUBSTRATES;

ELECTRON DEVICES; MOSFET DEVICES; REFRACTORY METALS; SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79951835644     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703307     Document Type: Conference Paper

References (11)

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