DC characteristics of AlGaAs/GaAs/GaN HBTs formed by direct wafer fusion

IEEE Electron Device Letters

Volumn 28, Issue 1, 2007, Pages 8-10

  Lian, Chuanxin ^a   Xing, Huili ^a   Wang, Chad S ^b   McCarthy, Lee ^b   Brown, Dave ^b  

^a University of Notre Dame   (United States)

^b Santa Barbara   (United States)

Author keywords

Gallium arsenide; Gallium nitride; Heterojunction bipolar transistor (HBT); Wafer fusion

Indexed keywords

CARRIER MOBILITY; LEAKAGE CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; WSI CIRCUITS;

CURRENT GAINS; DIRECT WAFER FUSION; EFFECTIVE MINORITY CARRIER;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33846008046     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.887932     Document Type: Article

References (12)

1. M. Asif Khan, J. N. Kuznia, D. T. Olson, W. J. Schaff, J. W. Burm, and M. S. Shur, "Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor," Appl. Phys. Lett., vol. 65, no. 9, pp. 1121-1123, Aug. 1994.
2. H. Xing, S. Keller, Y.-F. Wu, L. McCarthy, I. P. Smorchkova, D. Buttari, R. Coffie, D. S. Green, G. Parish, S. Heikman, L. Shen, N. Zhang, J. J. Xu, B. P. Keller, S. P. DenBaars, and U. K. Mishra, "Gallium nitride based transistors," J. Phys., Condens. Matter, vol. 13, no. 32, pp. 7139-7157, Aug. 2001.
3. Y.M. Zhang, C. Cai, and P. P. Ruden, "AlGaN/GaN heterojunction bipolar transistor structures - Design consideration," J. Appl. Phys., vol. 88, no. 2, pp. 1067-1072, Jul. 2000.
4. H. Xing, D. Jena, M. J. W. Rodwell, and U. K. Mishra, "Explanation of anomalously high current gain observed in GaN based bipolar transistors," IEEE Electron Device Lett., vol. 24, no. 1, pp. 4-6, Jan. 2003.
5. L. S. McCarthy, I. P. Smorchkova, H. Xing, P. Kozodoy, P. Fini, J. Limb, D. L. Pulfrey, J. S. Speck, M. J. W. Rodwell, S. P. DenBaars, and U. K. Mishra, "GaN HBT: Toward an RF device," IEEE Trans. Electron Devices, vol. 48, no. 3, pp. 543-551, Mar. 2001.
6. Q.-Y. Tong and U. Gösele, Semiconductor Wafer Bonding: Science and Technology. New York: Wiley, 1999.
7. S. Estrada, A. Huntington, A. Stonas, H. Xing, U. Mishra, S. DenBaars, L. Coldren, and E. Hu, "n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor wafer fused at 550 °C-750 °C," Appl. Phys. Lett., vol. 83, no. 3, pp. 560-562, Jul. 2003.
8. S. Estrada, E. Hu, and U. Mishra, "n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor: The first transistor formed via wafer fusion," Int. J. High Speed Electron. Syst., vol. 14, no. 1, pp. 265-284, 2004.
9. S. Estrada, J. Champlain, C. Wang, A. Stonas, L. Coldren, S. DenBaars, U. Mishra, and E. Hu, "Wafer-fused n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor with UID-GaAs base-collector setback," in Proc. MRS, 2004, vol. 798, pp. Y10-20-1-Y10-20-4.
10. C. G. Van de Walle and R. M. Martin, "Theoretical study of band offsets at semiconductor interfaces," Phys. Rev. B, Condens. Matter, vol. 35, no. 15, pp. 8154-8165, May 1987.
11. J. Jasinski, Z. Liliental-Weber, S. Estrada, and E. Hu, "Microstructure of GaAs/GaN interfaces produced by direct wafer fusion," Appl. Phys. Lett., vol. 81, no. 17, pp. 3152-3154, Oct. 2002.
12. U. Strauss, A. P. Heberle, X. Q. Zhou, W. W. Ruhle, T. Lauterbach, K. H. Bachem, and N. M. Naegel, "Minority-carrier lifetime in heavily doped GaAs:C," Jpn. J. Appl. Phys., vol. 32, no. 1B, pp. 495-497, Jan. 1993.