Self-aligned NiGeSi contacts on gallium arsenide for III-V MOSFETs

ECS Transactions

Volumn 33, Issue 6, 2010, Pages 1021-1028

  Zhang, Xingui ^a   Guo, Huaxin ^a   Chin, Hock Chun ^a   Gong, Xiao ^a   Lim, Phyllis Shi Ya ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; GALLIUM ARSENIDE; GERMANIUM COMPOUNDS; III-V SEMICONDUCTORS; METALLIZING; MOSFET DEVICES; NICKEL; NICKEL COMPOUNDS; SEMICONDUCTING GALLIUM; SILICON;

MATERIALS AND PROCESS; METALLIZATION PROCESS; NICKEL GERMANIDE (NIGE); NICKEL GERMANOSILICIDE; OUTPUT CHARACTERISTICS; PRECISE CONTROL; SELECTIVE EPITAXY; SELF ALIGNED CONTACTS;

SI-GE ALLOYS;

EID: 79952510420     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3487634     Document Type: Conference Paper

References (25)

1. R. Chau et al., IEEE Trans. Nanotechnology, vol. 4, pp. 153, 2005.
2. S. Datta et al., Microelectronic Engineering, vol. 84, no. 9-10, pp. 2133-2137, Sep. 2007.
3. S. Datta et al., Device Research Conference-Conference Digest, DRC, pp. 33-36, 2008.
4. H.-L. Hwang et al., Applied Surface Science, vol. 254, no. 1, pp. 236-241, Oct. 2007.
5. M. Hong et al., Jap. J. Applied Physics, Part 1, vol. 46, no. 5B, pp.3167-3180, May 2007.
6. P. D. Ye et al., ECS Transactions, vol. 19, no. 2, pp. 605-614, 2009.
7. M. Heyns et al., ECS Transactions, vol. 25, no. 6, pp. 51-65, 2009.
8. R. J. W. Hill et al., Solid State Technology, vol. 53, no. 3, pp. 17-19, Mar. 2010.
9. M. Passlack et al., Technical Digest-IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC, pp. 39-42, 2006.
10. M. Radosavljevic et al., IEDM Tech. Dig., pp. 319-322, 2009
11. Y. Sun et al., IEEE Electron Device Letters, vol. 30, no. 1, pp. 5-7, 2009.
12. R. J. W. Hill et al., IEEE Electron Device Letters, vol. 20, no. 12, pp. 1080-1082, Dec. 2007.
13. Y. Q. Wu et al., IEDM Tech. Dig., pp. 323-326, 2009.
14. H.-C. Chin et al., IEEE Electron Device Letters, vol. 29, no. 6, pp. 553-556, Jun. 2008.
15. H.-C. Chin et al., IEEE Trans. Elect. Dev., vol. 57, no. 5, pp. 973-979, May 2010.
16. P. D. Ye et al., IEEE Electron Device Letters, vol. 24, pp. 209-211, Apr. 2003.
17. T. D. Lin et al., Applied. Physics. Letters, vol. 93, 033516, 2008.
18. U. Singisetti et al., IEEE Electron Device Letters, vol. 30, no. 11, pp. 1128-1130, Nov. 2009.
19. H.-C. Chin et al., IEEE Electron Device Letters, vol. 30, no. 8, pp. 805-807, Aug. 2009.
20. U. Singisetti et al., Phys. Status Solidi C6, no. 6, pp. 1394-1398, 2009.
21. X. Li et al., J. Vac. Sci. Technol. B, vol. 27, no. 6, pp. 3153-3157, Nov. 2009.
22. X. Zhang et al., VLSI Symp., pp. 233-234, 2010.
23. H.-C. Chin et al., IEDM Tech. Dig., pp. 383, 2008.
24. G.-L. Luo et al., J. Electrochemical Society, vol. 157, no. 1, pp. H27-H30, 2010.
25. S. Gaudet et al., J. Applied. Physics, vol. 100, 034306, 2006.