Metal source/drain inversion-mode InP MOSFETs

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2009, Pages 115-116

  Kim, S H ^a   Nakagawa, S ^a   Haimoto, T ^a   Nakane, R ^a   Takenaka, M ^a   Takagi, S ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BULK ELECTRONS; CHANNEL MATERIALS; DOPANT SOLUBILITY; ELECTRICAL CHARACTERISTIC; GAAS; III-V COMPOUNDS; INAS; INP; INP SUBSTRATES; LOW RESISTANCE; LOW-LEAKAGE CURRENT; METAL MATERIALS; METAL SOURCE/DRAIN; MOSFETS; NMOSFETS; ROOM TEMPERATURE; SOURCE/DRAIN REGIONS;

ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; MOSFET DEVICES; SEMICONDUCTING INDIUM; SEMICONDUCTOR DIODES;

METALS;

EID: 76549084856     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2009.5354866     Document Type: Conference Paper

References (2)

1. Heon-Bok Lee et al, IEEE Electron Divice Letters, vol.27, NO.2, p.81(2006).
2. Ning Li et al, Appl.Phys.Lett, vol.92, p.143507(2008).