High-performance InSb based quantum well field effect transistors for low-power dissipation applications

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Ashley, T ^a   Emeny, M T ^a   Hayes, D G ^a   Hilton, K P ^a   Jefferies, R ^a   MacLean, J O ^a   Smith, S J ^a   Tang, A W H ^a   Wallis, D J ^a   Webber, P J ^a  

^a QINETIQ   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT GAINS; INDIUM ANTIMONIDE; INTEGRATED PASSIVES; LOW-POWER DISSIPATION; MULTI-STAGE; N-CHANNEL; POWER GAINS; QUANTUM WELL; QUANTUM WELL FIELD-EFFECT TRANSISTORS; SATURATION VELOCITY; ULTRA HIGH SPEED;

ELECTRON DEVICES; ELECTRON MOBILITY; INDIUM ANTIMONIDES; LOW NOISE AMPLIFIERS; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WELLS;

FIELD EFFECT TRANSISTORS;

EID: 77952355635     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424207     Document Type: Conference Paper

References (6)

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