Self-aligned metal Source/Drain InxGa1-xas n-MOSFETs using Ni-InGaAs alloy

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Kim, S H ^a   Yokoyama, M ^a   Taoka, N ^a   Iida, R ^a   Lee, S ^a   Nakane, R ^a   Urabe, Y ^b   Miyata, N ^b   Yasuda, T ^b   Yamada, H ^c   Fukuhara, N ^c   Hata, M ^c   Takenaka, M ^a   Takagi, S ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c SUMITOMO CHEMICAL CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION PROCESS; METAL SOURCE/DRAIN; MOSFETS; NMOSFETS; PEAK MOBILITY; PN-JUNCTION DEVICES; PROMISING MATERIALS; SCHOTTKY BARRIER HEIGHTS; SELF-ALIGNED;

ALLOYS; CERIUM ALLOYS; ELECTRIC RESISTANCE; ELECTRON DEVICES; GALLIUM; METALS; MOSFET DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM; SHEET RESISTANCE;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 79951826962     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703429     Document Type: Conference Paper

References (7)

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7. T. D. Lin et al., Solid-State Electronics 54, (2010) 919-924