Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H-SiC Schottky diodes

Journal of Applied Physics

Volumn 97, Issue 1, 2005, Pages

  Wang, Y ^a   Ali, G N ^a   Mikhov, M K ^a   Vaidyanathan, V ^a   Skromme, B J ^a   Raghothamachar, B ^b   Dudley, M ^b  

^a ARIZONA STATE UNIVERSITY   (United States)

^b Stony Brook University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; ELECTRON BEAM-INDUCED CURRENT (EBIC); NOMARSKI MICROSCOPY; SYNCHROTRON WHITE-BEAM X-RAY TOPOGRAPHY (SWBXT);

ATOMIC FORCE MICROSCOPY; CORRELATION METHODS; ELECTRIC BREAKDOWN; ELECTROLUMINESCENCE; ELECTRON BEAMS; MORPHOLOGY; PLASMAS; SCHOTTKY BARRIER DIODES;

SILICON CARBIDE;

EID: 19944432861     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1829784     Document Type: Article

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