SCOPUS 정보 검색 플랫폼

Journal of Electronic Materials

Volumn 38, Issue 4, 2009, Pages 574-580

Defect analysis of barrier height inhomogeneity in titanium 4H-SiC schottky barrier diodes

(2) Bolen, M L a Capano, M A a

a PURDUE UNIVERSITY (United States)

Author keywords

Barrier height; Crystal defects; Schottky barrier diode; Silicon carbide; Threading dislocations

Indexed keywords

ACTIVE AREAS; ATOMIC FORCES; BARRIER HEIGHT; BARRIER HEIGHT INHOMOGENEITY; CURRENT-VOLTAGE MEASUREMENTS; DEFECT ANALYSIS; I-V CHARACTERISTICS; IDEALITY FACTORS; KOH ETCHINGS; POSITIVE CORRELATIONS; SCHOTTKY BARRIER DIODE; THREADING DISLOCATIONS;

DEFECT DENSITY; DEFECTS; DISLOCATIONS (CRYSTALS); DISPLAY DEVICES; OPTICAL MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SILICON CARBIDE; TITANIUM;

SCHOTTKY BARRIER DIODES;

EID: 61849121872 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-008-0647-5 Document Type: Conference Paper

Times cited : (13)

References (21)

1
- 36148966151
- K.-Y. Lee C.-F. Huang W. Chen M.A. Capano 2007 Physica B 401-402 41
- (2007) Physica B , vol.401-402 , pp. 41
- Lee, K.-Y.¹ Huang, C.-F.² Chen, W.³ Capano, M.A.⁴

2
- 0000421682
- P.G. Neudeck 2003 Mater. Sci. Forum 338-342 1161
- (2003) Mater. Sci. Forum , vol.338-342 , pp. 1161
- Neudeck, P.G.¹

3
- 0000118549
- R. Yakimova M. Tuominen A.S. Bakin J.O. Fornell A. Vehanen E. Janzen 1996 Inst. Phys. Conf. Ser. 142 101
- (1996) Inst. Phys. Conf. Ser. , vol.142 , pp. 101
- Yakimova, R.¹ Tuominen, M.² Bakin, A.S.³ Fornell, J.O.⁴ Vehanen, A.⁵ Janzen, E.⁶

4
- 0001038075
- S.V. Rendakova I.P. Nikitina A.S. Tregubova V.A. Dmitriev 1998 J. Electron. Mater. 27 292
- (1998) J. Electron. Mater. , vol.27 , pp. 292
- Rendakova, S.V.¹ Nikitina, I.P.² Tregubova, A.S.³ Dmitriev, V.A.⁴

5
- 33845190090
- E. Schmitt T. Straubinger M. Rasp A.-D. Weber 2006 Superlattices Microstruct. 40 320
- (2006) Superlattices Microstruct. , vol.40 , pp. 320
- Schmitt, E.¹ Straubinger, T.² Rasp, M.³ Weber, A.-D.⁴

6
- 0036430554
- H. Lendenmann F. Dahlquist J.P. Bergman H. Bleichner C. Hallin 2002 Mater. Sci. Forum 389-393 1259
- (2002) Mater. Sci. Forum , vol.389-393 , pp. 1259
- Lendenmann, H.¹ Dahlquist, F.² Bergman, J.P.³ Bleichner, H.⁴ Hallin, C.⁵

7
- 29244458363
- W. Chen M.A. Capano 2005 J. Appl. Phys. 98 114907
- (2005) J. Appl. Phys. , vol.98 , pp. 114907
- Chen, W.¹ Capano, M.A.²

8
- 0030107490
- A. Itoh T. Kimoto H. Matsunami 1996 IEEE Electron. Dev. Lett. 17 139
- (1996) IEEE Electron. Dev. Lett. , vol.17 , pp. 139
- Itoh, A.¹ Kimoto, T.² Matsunami, H.³

9
- 0036536195
- T. Kimoto N. Miyamoto A. Schoner A. Saitoh H. Matsunami 2002 J. Appl. Phys. 91 4242
- (2002) J. Appl. Phys. , vol.91 , pp. 4242
- Kimoto, T.¹ Miyamoto, N.² Schoner, A.³ Saitoh, A.⁴ Matsunami, H.⁵

10
- 0004251329
- Addison-Wesley Menlo Park
- R. Pierret, Semiconductor Device Fundamentals, (Addison-Wesley, 1996)
- (1996) Semiconductor Device Fundamentals
- Pierret, R.¹

11
- 38549149336
- A. Laref S. Laref 2008 Phys. Status Solidi B 245 89
- (2008) Phys. Status Solidi B , vol.245 , pp. 89
- Laref, A.¹ Laref, S.²

12
- 0037321525
- H. Iwata U. Lindefelt S. Öberg P.R. Briddon 2003 J. Appl. Phys. 93 1577
- (2003) J. Appl. Phys. , vol.93 , pp. 1577
- Iwata, H.¹ Lindefelt, U.² Öberg, S.³ Briddon, P.R.⁴

13
- 19944432861
- Y. Wang N. Ali M.K. Mikhov V. Vaidyanathan B.J. Skromme B. Raghothamachar M. Dudley 2005 J. Appl. Phys. 97 013540
- (2005) J. Appl. Phys. , vol.97 , pp. 013540
- Wang, Y.¹ Ali, N.² Mikhov, M.K.³ Vaidyanathan, V.⁴ Skromme, B.J.⁵ Raghothamachar, B.⁶ Dudley, M.⁷

14
- 34547702592
- H. Tsuchida I. Kamata M. Nagano 2007 J. Cryst. Growth 306 254
- (2007) J. Cryst. Growth , vol.306 , pp. 254
- Tsuchida, H.¹ Kamata, I.² Nagano, M.³

15
- 0038311926
- F. Roccaforte F.L. Via V. Raineri R.P. Pierobon E. Zanoni 2003 J. Appl. Phys. 93 9137
- (2003) J. Appl. Phys. , vol.93 , pp. 9137
- Roccaforte, F.¹ Via, F.L.² Raineri, V.³ Pierobon, R.P.⁴ Zanoni, E.⁵

16
- 30344465738
- C.F. Pirri S. Ferrero L. Scaltrito D. Perrone S. Guastella M. Furno G. Richieri L. Merlin 2006 Microelectron. Eng. 83 86
- (2006) Microelectron. Eng. , vol.83 , pp. 86
- Pirri, C.F.¹ Ferrero, S.² Scaltrito, L.³ Perrone, D.⁴ Guastella, S.⁵ Furno, M.⁶ Richieri, G.⁷ Merlin, L.⁸

17
- 0033876688
- B.J. Skromme E. Luckowski K. Moore M. Bhatnagar C.E. Weitzel T. Gehoski D. Ganser 2000 J. Electron. Mater. 29 376
- (2000) J. Electron. Mater. , vol.29 , pp. 376
- Skromme, B.J.¹ Luckowski, E.² Moore, K.³ Bhatnagar, M.⁴ Weitzel, C.E.⁵ Gehoski, T.⁶ Ganser, D.⁷

18
- 36448932008
- D.J. Ewing Q. Wahab R.R. Ciechonski M. Syvajarvi R. Yakimova L.M. Porter 2007 Semicond. Sci. Tech. 22 1287
- (2007) Semicond. Sci. Tech. , vol.22 , pp. 1287
- Ewing, D.J.¹ Wahab, Q.² Ciechonski, R.R.³ Syvajarvi, M.⁴ Yakimova, R.⁵ Porter, L.M.⁶

19
- 0036788247
- S. Ha P. Mieszkowski M. Skowronski L.B. Rowland 2002 J.Cryst. Growth 244 257
- (2002) J.Cryst. Growth , vol.244 , pp. 257
- Ha, S.¹ Mieszkowski, P.² Skowronski, M.³ Rowland, L.B.⁴

20
- 32144440644
- S. Nitani T. Hatayama K. Yamaguchi H. Yano T. Uraoka T. Fuyuki 2005 Jpn. J. Appl. Phys. 44 L1271
- (2005) Jpn. J. Appl. Phys. , vol.44 , pp. 1271
- Nitani, S.¹ Hatayama, T.² Yamaguchi, K.³ Yano, H.⁴ Uraoka, T.⁵ Fuyuki, T.⁶

21
- 34250637966
- D.J. Ewing L.M. Porter Q. Wahab X. Ma T.S. Sudharshan S. Tumakha M. Gao L.J. Brillson 2007 J. Appl. Phys. 101 114514
- (2007) J. Appl. Phys. , vol.101 , pp. 114514
- Ewing, D.J.¹ Porter, L.M.² Wahab, Q.³ Ma, X.⁴ Sudharshan, T.S.⁵ Tumakha, S.⁶ Gao, M.⁷ Brillson, L.J.⁸

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.