Influence of hydrogen treatment and annealing processes upon the Schottky barrier height of Au/n-GaAs and Ti/n-GaAs diodes

Semiconductor Science and Technology

Volumn 19, Issue 12, 2004, Pages 1391-1396

  Forment, S ^a   Biber, M ^b   Van Meirhaeghe, R L ^a   Leroy, W P ^a   Turut A ^b  

^a GHENT UNIVERSITY   (Belgium)

^b ATATÜRK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; GALLIUM; MATHEMATICAL MODELS; METALLIZING; POLARIZATION; THERMAL EFFECTS;

HYDROGEN TREATMENT; INTERFACIAL DIPOLES; METAL SEMICONDUCTOR (MS) INTERFACE; SCHOTTKY BARRIER HEIGHT (SBH) VARIATION;

SCHOTTKY BARRIER DIODES;

EID: 10444257301     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/12/011     Document Type: Article

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