Surface barrier height in metal-SiC structures of 6H, 4H and 3C polytypes

Materials Science and Engineering B

Volumn 46, Issue 1-3, 1997, Pages 236-239

  Syrkin, A L ^a   Bluet, J M ^a   Bastide, G ^a   Bretagnon, T ^a   Lebedev, A A ^b   Rastegaeva, M G ^b   Savkina, N S ^b   Chelnokov, V E ^b  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

High temperature devices; Metal silicon carbide structures; Polytypes; Surface barrier height

Indexed keywords

IMPURITIES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; SILICON CARBIDE;

POLYTYPES;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0038116011     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01978-2     Document Type: Article

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