Observation of dislocations in diffused 4H-SiC p-i-n diodes by electron-beam induced current

Journal of Applied Physics

Volumn 97, Issue 1, 2005, Pages

  Maximenko, S ^a   Soloviev, S ^a   Cherednichenko, D ^a   Sudarshan, T ^a  

^a The Department of Mechanical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL ACTIVITY; ELECTRON-BEAM INDUCED CURRENT (EBIC); HIGH-TEMPERATURE DIFFUSION; IMPURITY-DISLOCATION INTERACTIONS;

DIFFUSION; DIODES; ELECTRON BEAMS; ETCHING; FUNCTIONS; HIGH TEMPERATURE EFFECTS; SAMPLING;

SILICON CARBIDE;

EID: 19944431210     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1828605     Document Type: Article

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