Origin of leakage current in SiC Schottky barrier diodes at high temperature

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 997-1000

  Saitoh, H ^a,b   Kimoto, T ^a   Matsunami, H ^a  

^a KYOTO UNIVERSITY   (Japan)

^b TOYOTA MOTOR CORPORATION   (Japan)

Author keywords

Barrier Height; Dislocation; Leakage Current; Schottky Barrier Diode

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRON TUNNELING; HIGH TEMPERATURE EFFECTS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR INSULATOR BOUNDARIES; THERMIONIC EMISSION;

BARRIER HEIGHT; EDGE DISLOCATION (ED); SCREW DISLOCATION (SD); SUBGRAIN BOUNDARY (GB);

SILICON CARBIDE;

EID: 8744234099     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.997     Document Type: Conference Paper

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