Quantum modelling of I-V characteristics for 4H-SiC Schottky barrier diodes

Semiconductor Science and Technology

Volumn 20, Issue 1, 2005, Pages 10-15

  Blasciuc Dimitriu, C ^a   Horsfall, A B ^a   Wright, N G ^a   Johnson, C M ^b   Vassilevski, K V ^a   O'Neill, A G ^a  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; HIGH TEMPERATURE EFFECTS; QUANTUM THEORY; SILICON CARBIDE; THERMIONIC EMISSION; TRANSMISSION ELECTRON MICROSCOPY;

POWER SUPPLIES; QUANTUM MODELING; SCHOTTKY CONTACTS; TRANSPORT PROCESS;

SCHOTTKY BARRIER DIODES;

EID: 12144267048     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/1/002     Document Type: Article

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