A new definition of threshold voltage in Tunnel FETs

Solid-State Electronics

Volumn 52, Issue 9, 2008, Pages 1318-1323

  Boucart, Kathy ^a   Ionescu, Adrian Mihai ^a  

^a EPFL   (Switzerland)

Author keywords

Band to band tunneling; Double gate; Gated p i n diode; High k dielectric; Scaling; Subthreshold swing; Threshold voltage; Tunnel field effect transistor

Indexed keywords

COMPUTER SIMULATION; MESFET DEVICES; THRESHOLD VOLTAGE; TUNNELS;

BAND-TO-BAND TUNNELING; DOUBLE GATE; GATE VOLTAGES; GATED P-I-N DIODE; HIGH-K DIELECTRIC; NUMERICAL SIMULATIONS; SCALING; SUBTHRESHOLD SWING; TUNNEL FIELD EFFECT TRANSISTOR;

FIELD EFFECT TRANSISTORS;

EID: 50349089642     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.04.003     Document Type: Article

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