Ultralow work function of scandium metal gate with tantalum nitride interface layer for n -channel metal oxide semiconductor application

Applied Physics Letters

Volumn 90, Issue 10, 2007, Pages

  Hasan, Musarrat ^a   Park, Hokyung ^a   Yang, Hyundoek ^a   Hwang, Hyunsang ^a   Jung, Hyung Suk ^b   Lee, Jong Ho ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH TEMPERATURE PROPERTIES; INTERFACES (MATERIALS); SCANDIUM ALLOYS; TANTALUM COMPOUNDS; THERMODYNAMIC STABILITY;

SCANDIUM METAL GATE; THERMAL INSTABILITY; ULTRALOW WORK FUNCTIONS;

MOS DEVICES;

EID: 33947175224     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2711398     Document Type: Article

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