A variational approach to the two-dimensional nonlinear Poisson's equation for the modeling of tunneling transistors

IEEE Electron Device Letters

Volumn 29, Issue 11, 2008, Pages 1252-1255

  Shen, Chen ^a   Ong, Sern Long ^a   Heng, Chun Huat ^a   Samudra, Ganesh ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Semiconductor device modeling; Tunnel transistors; Variational methods

Indexed keywords

FIELD EFFECT TRANSISTORS; MESFET DEVICES; MOS DEVICES; MOSFET DEVICES; NONLINEAR EQUATIONS; POISSON DISTRIBUTION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; TRANSISTORS; TUNNELING (EXCAVATION);

BEFORE AND AFTER; CLOSED FORMS; DIFFERENT MECHANISMS; INVERSION LAYERS; NEW APPROACHES; SEMICONDUCTOR DEVICE MODELING; TUNNEL TRANSISTORS; TUNNELING BARRIERS; VARIATIONAL APPROACHES; VARIATIONAL METHODS;

POISSON EQUATION;

EID: 55149114181     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2005517     Document Type: Article

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