The use of spatial analysis techniques in defect and nanostructure studies

Journal of Electronic Materials

Volumn 39, Issue 6, 2010, Pages 656-662

  Moram, M A ^a   Gabbai, U E ^a   Sadler, T C ^a   Kappers, M J ^a   Oliver, R A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Dislocations; Gallium nitride; Indium aluminum nitride; Quantum dot; Spatial analysis

Indexed keywords

DEVICE PROPERTIES; DISLOCATIONS; GAN FILM; GENERATION PROCESS; HIGH-DENSITY; III-NITRIDE; INGAN/GAN; LINEAR ARRAYS; QUANTUM DOT; QUANTUM DOTS; RANDOM POSITION; SHORT RANGE ORDERING; SPATIAL ANALYSIS; SPATIAL ARRANGEMENTS; SPATIAL AUTOCORRELATIONS;

ALUMINUM; ALUMINUM NITRIDE; DEFECTS; GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM; NANOSTRUCTURES; OPTICAL WAVEGUIDES; SEMICONDUCTOR QUANTUM DOTS;

ALUMINUM GALLIUM NITRIDE;

EID: 77954620864     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-010-1177-5     Document Type: Article

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