Photoluminescence of near-lattice-matched GaNAlInN quantum wells grown on free-standing GaN and on sapphire substrates

Applied Physics Letters

Volumn 92, Issue 3, 2008, Pages

  Tan, L T ^a   Martin, R W ^a   O'Donnell, K P ^a   Watson, I M ^a   Wu, Z H ^b   Ponce, F A ^b  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; GALLIUM NITRIDE; PHOTOLUMINESCENCE; SAPPHIRE;

EXCITATION POWER DEPENDENCE; EXCITATION SPECTROSCOPIES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 38549100571     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2837630     Document Type: Article

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