A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy

Applied Physics Letters

Volumn 93, Issue 19, 2008, Pages

  Fernandez Garrido S ^a   Gacevic Z ^a   Calleja, E ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL GROWTH; DECOMPOSITION; GALLIUM NITRIDE; METALLIC COMPOUNDS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; PLASMAS; PYROLYSIS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; STOICHIOMETRY;

ARRHENIUS BEHAVIORS; GROWTH FRONTS; OPTIMUM GROWTH CONDITIONS; SUBSTRATE TEMPERATURES; THERMAL DECOMPOSITIONS;

GALLIUM ALLOYS;

EID: 56249126331     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3026541     Document Type: Article

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