InAlN/GaN heterostructure field-effect transistors grown by plasma-assisted molecular-beam epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 6 B, 2004, Pages

  Higashiwaki, Masataka ^a   Matsui, Toshiaki ^a  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

Author keywords

Atomic force microscopy; Current voltage characteristics; GaN; Heterostructure field effect transistor; InAlN; Molecular beam epitaxy; Transconductance; X ray diffraction

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; DECOMPOSITION; FABRICATION; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS; TRANSCONDUCTANCE;

GAN; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (HFET); INALN; SUBMILLIMETER WAVE DEVICES;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 4243188128     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l768     Document Type: Article

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