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Volumn 44, Issue 10, 2005, Pages 7207-7216

Recent progress in the growth of highly reflective nitride-based distributed Bragg reflectors and their use in microcavities

Author keywords

Distributed Bragg reflectors; Electrical injection; III nitride compounds; Internal absorption; Leaky modes; Microcavity; Quality factor; Spontaneous emission; Strain management; UV blue vertical cavity laser

Indexed keywords

ABSORPTION; CRYSTAL LATTICES; GALLIUM NITRIDE; NITRIDES; QUANTUM OPTICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SPONTANEOUS EMISSION;

EID: 31644442230     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.7207     Document Type: Review
Times cited : (97)

References (69)
  • 14
  • 15
    • 0142123089 scopus 로고    scopus 로고
    • and references therein
    • More precisely depending on experimental conditions we should refer either to a Kosterlitz-Thouless phase transition or a quasi-Bose condensation as discussed in details by G. Malpuech, Y. G. Rubo, F. P. Laussy, P. Bigenwald and A. V. Kavokin; Semicond. Sci. Technol. 18 (2003) S395, and references therein.
    • (2003) Semicond. Sci. Technol. , vol.18
    • Malpuech, G.1    Rubo, Y.G.2    Laussy, F.P.3    Bigenwald, P.4    Kavokin, A.V.5
  • 24
    • 31644440605 scopus 로고    scopus 로고
    • note
    • If we discard the AlN/InN material system which is unlikely to be used for the growth of DBRs considering their large lattice-mismatch and the very different growth conditions of these two compounds.
  • 44
    • 0003415938 scopus 로고
    • (Adam Hilger, Bristol, U.K.) 2nd ed.
    • H. A. McLeod: Thin-Film Optical Filters (Adam Hilger, Bristol, U.K., 1986) 2nd ed., p. 165.
    • (1986) Thin-film Optical Filters , pp. 165
    • McLeod, H.A.1
  • 50
    • 31644448502 scopus 로고    scopus 로고
    • note
    • In ∼ 18%) lattice-matched to GaN, the corresponding bowing parameter is 6.7 eV.
  • 56
    • 31644447312 scopus 로고    scopus 로고
    • note
    • -1 is manifestly incorrect when taking into account the parameters and the equation cited in ref. 5.
  • 58
    • 31644440657 scopus 로고    scopus 로고
    • note
    • Bright spots similar to those described in ref. 2 have been observed in our LEDs and were ascribed to a non-uniform doping across the p type layer.
  • 64
    • 31644435151 scopus 로고    scopus 로고
    • note
    • Note that in AlGaN/(Al)GaN DBR structures, where even smaller SBW than in AlInN/GaN are reported, the angular limitation would be much more pronounced. Furthermore, in asymmetric structures made, e.g., of a bottom nitride DBR and a top dielectric DBR, the contribution of leaky modes will depend obviously on the DBR exhibiting the narrowest SBW. It is worth pointing out that in a recent paper [M. Richard, R. Romestain, R. André and L. S. Dang: Appl. Phys. Lett. 86 (2005) 071916], it was shown that the high oscillator strength of excitons in II-VI MCs operating in the strong coupling regime leads to the strong coupling of these excitons with leaky modes (also called Bragg modes) modifying thereby the usual" relaxation dynamics of exciton-polaritons and then the polariton state occupancy (since the weight of the polariton wave functions - especially the lower one at large emission angle, i.e., at large in-plane momentum - will integrate Bragg mode components). Such a situation is likely to occur in nitride-based MC structures.
  • 65
    • 31644440656 scopus 로고    scopus 로고
    • note
    • det = 7° in the latter case, a peak broadening being usually observed with increasing angles when performing angular resolved measurements.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.