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Physical Review B - Condensed Matter and Materials Physics

Volumn 78, Issue 3, 2008, Pages

(Al,In)N layers and (Al,In)N/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on 6H-SiC (0001)

(5) Ive, Tommy a,b Brandt, Oliver a Kong, Xiang a,c Trampert, Achim a Ploog, Klaus H a

a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

b UNIVERSITY OF CALIFORNIA (United States)

c UNIVERSITY OF GLASGOW (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 47349110173 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.78.035311 Document Type: Article

Times cited : (21)

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