SCOPUS 정보 검색 플랫폼

Superlattices and Microstructures

Volumn 47, Issue 1, 2010, Pages 129-133

Fabrication and spectroscopy of GaN microcavities made by epitaxial lift-off

(8) Xiong, C a Rizzi, F b Bejtka, K c Edwards, P R c Gu, E c Dawson, M D c Martin, R W c,d Watson, I M c

a PEKING UNIVERSITY (China)

b ISTITUTO ITALIANO DI TECNOLOGIA (Italy)

c UNIVERSITY OF STRATHCLYDE (United Kingdom)

d CRHEA CNRS (France)

Author keywords

Aluminium indium nitride; Gallium nitride; Microcavity; Photoluminescence; Reflectance; Wet etching

Indexed keywords

ALUMINIUM INDIUM NITRIDE; EPITAXIAL LIFTOFF; GAN TEMPLATE; HIGH QUALITY; III-NITRIDES; INDIUM NITRIDE; OPTICALLY SMOOTH SURFACES; PLANAR MICROCAVITY; REFLECTIVITY SPECTRA; ROOT MEAN SQUARE ROUGHNESS; SELECTIVE REMOVAL; TRILAYERS;

ACIDS; ALUMINUM; GALLIUM NITRIDE; INDIUM; MICROCAVITIES; NITRIC ACID; PHOTOLUMINESCENCE; REFLECTION; SEMICONDUCTING GALLIUM; WET ETCHING;

GALLIUM ALLOYS;

EID: 72449122798 PISSN: 07496036 EISSN: 10963677 Source Type: Journal
DOI: 10.1016/j.spmi.2009.07.001 Document Type: Article

Times cited : (2)

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