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Volumn 106, Issue 5, 2009, Pages

Morphological changes of InGaN epilayers during annealing assessed by spectral analysis of atomic force microscopy images

(4) Oliver, Rachel A a Sumner, Joy a Kappers, Menno J a Humphreys, Colin J a

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE; CAPPING LAYER; DOMINANT MECHANISM; ELEVATED TEMPERATURE; HIGH EFFICIENCY; INGAN EPILAYERS; INGAN QUANTUM WELLS; LED STRUCTURE; MECHANISTIC ANALYSIS; MORPHOLOGICAL CHANGES; POWER SPECTRAL DENSITY ANALYSIS; SPECTRAL ANALYSIS;

ANNEALING; ATOMIC FORCE MICROSCOPY; EPILAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; MORPHOLOGY; ORGANIC LIGHT EMITTING DIODES (OLED); POWER SPECTRAL DENSITY; SEMICONDUCTING GALLIUM; SOIL CONSERVATION; SPECTRUM ANALYSIS; SPECTRUM ANALYZERS;

SURFACE DIFFUSION;

EID: 70349310432 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3212971 Document Type: Article

Times cited : (12)

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