The origin and reduction of dislocations in Gallium Nitride

Journal of Materials Science: Materials in Electronics

Volumn 19, Issue SUPPL. 1, 2008, Pages

  Oliver, R A ^a   Kappers, M J ^a   McAleese, C ^a   Datta, R ^a   Sumner, J ^a   Humphreys, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

2D GROWTH; 3D ISLANDS; ATOMIC FORCE; ELECTRICAL RESISTIVITIES; GAN GROWTH; HIGH DISLOCATION DENSITY; METAL-ORGANIC VAPOUR PHASE EPITAXY; THREADING DISLOCATIONS; THREE DIMENSIONAL (3D) ISLANDS;

CORUNDUM; CRYSTAL GROWTH; ELECTRIC RESISTANCE; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; LANDFORMS; NITRIDES; SEMICONDUCTING GALLIUM; SINGLE CRYSTALS; THREE DIMENSIONAL;

VAPOR PHASE EPITAXY;

EID: 53649098472     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-008-9648-7     Document Type: Article

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