SCOPUS 정보 검색 플랫폼

Volumn 108, Issue 10, 2010, Pages

Modeling and performance analysis of GaN nanowire field-effect transistors and band-to-band tunneling field-effect transistors

(2) Khayer, M Abul a Lake, Roger K a

a University of California Riverside (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND TO BAND TUNNELING; DEVICE PERFORMANCE; DRIVE CURRENTS; ELECTRON EFFECTIVE MASS; GAN NANOWIRES; HIGH DENSITY; HIGH POWER APPLICATIONS; HIGH-SPEED; KP MODELS; ON-CURRENTS; PERFORMANCE ANALYSIS; QUANTUM CAPACITANCE;

CAPACITANCE; ELECTRIC FIELDS; ELECTRIC WIRE; GALLIUM ALLOYS; GALLIUM NITRIDE; MESFET DEVICES; NANOWIRES; TRANSPORT PROPERTIES;

FIELD EFFECT TRANSISTORS;

EID: 78650301725 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3510502 Document Type: Conference Paper

Times cited : (14)

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