Contact characteristics in GaN nanowire devices

Nanotechnology

Volumn 17, Issue 9, 2006, Pages 2203-2206

  Ham, Moon Ho ^a   Choi, Ji Hyuk ^a   Hwang, Wonseok ^a   Park, Cheolmin ^a   Lee, Woo Young ^a   Myoung, Jae Min ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; EVAPORATION; GALLIUM NITRIDE; SINGLE CRYSTALS; THERMIONIC EMISSION;

CURRENT TRANSPORT; NANOSCALE DEVICES; NANOWIRES; SPECIFIC CONTACT RESISTIVITY;

NANOSTRUCTURED MATERIALS;

EID: 33646168510     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/9/021     Document Type: Article

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