Gallium nitride nanowire nonvolatile memory device

Journal of Applied Physics

Volumn 100, Issue 2, 2006, Pages

  Cha, Ho Young ^a,b   Wu, Huaqiang ^a   Chae, Soodoo ^a,c   Spencer, Michael G ^a  

^a Cornell University   (United States)

^b GE GLOBAL RESEARCH   (United States)

^c SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ERASE MECHANISM; NANOWIRE CHANNEL; NONVOLATILE MEMORY DEVICE; POSITIVE GATE BIASES;

CHARGE CARRIERS; DATA STORAGE EQUIPMENT; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA;

NONVOLATILE STORAGE;

EID: 33746806779     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2216488     Document Type: Article

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