Electrical characteristics of GaN-based metal-oxide-semiconductor (MOS) structures

Microelectronic Engineering

Volumn 81, Issue 2-4, 2005, Pages 201-205

  Abdullah, K A ^a   Abdullah, M J ^a   Yam, F K ^a   Hassan, Z ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

Author keywords

Characterization; Gallium nitride; Metal oxide semiconductor; Silicon dioxide

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARACTERIZATION; ENERGY DISPERSIVE SPECTROSCOPY; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SILICA; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CAPACITANCE-VOLTAGE (C-V) MEASUREMENTS; GROWTH TEMPERATURES; HIGH FREQUENCY DEVICES; SILICON SUBSTRATES;

MOS DEVICES;

EID: 23444448299     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.03.007     Document Type: Conference Paper

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