The quantum and classical capacitance limits of InSb and InAs nanowire FETs

IEEE Transactions on Electron Devices

Volumn 56, Issue 10, 2009, Pages 2215-2223

  Abul Khayer, M ^a   Lake, Roger K ^a  

^a University of California Riverside   (United States)

Author keywords

Band structure; Classical capacitance (CC); Effective mass; InAs NWFETs; InSb nanowire FETs (NWFETs); K p method; Nanowires (NWs); Quantum capacitance (QC)

Indexed keywords

CLASSICAL CAPACITANCE (CC); EFFECTIVE MASS; INAS NWFETS; INSB NANOWIRE FETS (NWFETS); QUANTUM CAPACITANCE (QC);

ALUMINA; BAND STRUCTURE; CAPACITANCE; ELECTRIC WIRE; FIELD EFFECT TRANSISTORS; INDIUM ARSENIDE; MESFET DEVICES; NANOWIRES; QUANTUM THEORY; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WIRES;

CUTOFF FREQUENCY;

EID: 70350077507     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2028401     Document Type: Article

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