SCOPUS 정보 검색 플랫폼

Volumn 35, Issue 4, 2006, Pages 670-674

High-yield GaN nanowire synthesis and field-effect transistor fabrication

Author keywords

Field effect transistor; Gallium nitride; High yield process; Nanowire

Indexed keywords

HIGH-YIELD PROCESS; NANOWIRES; PINCH-OFF CHARACTERISTICS; PREALIGNED PROCESS;

CATALYSTS; CHEMICAL VAPOR DEPOSITION; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; NICKEL; SYNTHESIS (CHEMICAL);

NANOSTRUCTURED MATERIALS;

EID: 33646737027 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-006-0118-9 Document Type: Conference Paper

Times cited : (26)

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