Nonlinearities in depth profiling nanometer layers

Journal of Vacuum Science and Technology B

Volumn 28, Issue 6, 2010, Pages 1215-1221

  Seah, M P ^a   Mulcahy, C P A ^b,d   Biswas, S ^c  

^a NATIONAL PHYSICAL LABORATORY   (United Kingdom)

^b BRUNEL UNIVERSITY   (United Kingdom)

^c Unit 520   (United Kingdom)

^d United States   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DEPTH PROFILING; METAL IONS; METALS; OXYGEN; SILICA; SPUTTERING;

CS +; DEPTH RESOLUTION; IN-DEPTH PROFILING; METALS IONS; OXYGEN CONTENT; SECONDARY ION-MASS SPECTROMETRY; SILICON DIOXIDE LAYERS; SPUTTER-DEPTH PROFILING; SPUTTERING RATE; ULTRATHIN SILICON DIOXIDE;

SECONDARY ION MASS SPECTROMETRY;

EID: 78650155250     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3504592     Document Type: Article

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