Apparent and real transient effects in SIMS depth profiling using oxygen bombardment

Applied Surface Science

Volumn 203-204, Issue , 2003, Pages 20-26

  Wittmaack, K ^a  

^a INSTITUTE OF EPIDEMIOLOGY   (Germany)

Author keywords

Caesium bombardment; Oxygen bombardment; Secondary ion yield; Sputtering yield; Transient changes

Indexed keywords

CALIBRATION; DOPING (ADDITIVES); MOLECULAR BEAM EPITAXY; PROBABILITY; SECONDARY ION MASS SPECTROMETRY; SPUTTERING; STANDARDS;

TRANSIENT EFFECTS;

ION BOMBARDMENT;

EID: 0037437843     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00640-2     Document Type: Conference Paper

References (25)

1. Wittmaack K. Phil. Trans. R. Soc. Lond. A. 354:1996;2731.
2. N.S. Smith, M.G. Dowsett, B. McGregor, P. Philips, in: A. Benninghoven, B. Hagenhoff, H.W. Werner (Eds.), Secondary Ion Mass Spectrometry SIMS X, Wiley, Chichester, 1997, p. 363.
3. Chia V.K.F., Mount G.R., Edgell M.J., Magee C.W. J. Vac. Sci. Technol. B. 17:1999;2345.
4. Alay J.L., Vandervorst W. Surf. Interface Anal. 19:1992;313.
5. Wittmaack K. Surf. Sci. 419:1999;249.
6. Jiang Z.X., Alkemade P.F.A. J. Vac. Sci. Technol. B. 16:1998;1971.
7. Wittmaack K. J. Vac. Sci. Technol. B. 16:1998;2776.
8. Ormsby T.J., Chu D.P., Dowsett M.G., Cooke G.A., Patel S.B. Appl. Surf. Sci. 144-145:1999;292.
9. Wittmaack K. J. Vac. Sci. Technol. B. 18:2000;1.
10. Magee C.W., Mount G.R., Smith S.P., Herner B., Gossmann H.-J. J. Vac. Sci. Technol. B. 16:1998;3099.
11. J.G.M. van Berkum, in: A. Benninghoven, P. Bertrand, H.N. Migeon, H.W. Werner (Eds.), Secondary Ion Mass Spectrometry SIMS XII, Elsevier, Amsterdam, 2000, p. 55.
12. Y. Kataoka, M. Shigeno, K. Wittmaack, in: M. Foad (Ed.), Ultra Shallow Junctions 2001, Napa Valley, 2001, p. 128 Kataoka Y., Shigeno M., Wittmaack K. J. Vac. Sci. Technol. B. 20:2002;441.
13. Y. Kataoka, M. Shigeno, K. Wittmaack, in: M. Foad (Ed.), Ultra Shallow Junctions 2001, Napa Valley, 2001, p. 128 Kataoka Y., Shigeno M., Wittmaack K. J. Vac. Sci. Technol. B. 20:2002;441.
14. Y. Kataoka, K. Yamazaki, M. Shigeno, Y. Tada, K. Wittmaack, Appl. Surf. Sci., these proceedings.
15. Wittmaack K. Surf. Interface Anal. 26:1998;290.
16. Wittmaack K. J. Vac. Sci. Technol. B. 16:1998;2776.
17. Wach W., Wittmaack K. Nucl. Instrum. Meth. 194:1982;113.
18. Stevie F.A., Martin E.P. Jr., Kahora P.M., Cargo J.T., Nanda A.K., Harrus A.S., Muller A.J., Krautter H.W. J. Vac. Sci. Technol. A. 9:1991;2813.
19. Wittmaack K., Griesche J., Osten H.J., Patel J.B. J. Vac. Sci. Technol. B. 18:2000;524.
20. J. Bennett, A. Diebold, in: A. Benninghoven, P. Bertrand, H.N. Migeon, H.W. Werner (Eds.), Secondary Ion Mass Spectrometry SIMS XII, Elsevier, Amsterdam, 2000, p. 541.
21. Wittmaack K. Surf. Interface Anal. 29:2000;721.
22. Schulz F., Wittmaack K. Radiat. Effects. 29:1976;31.
23. Eckstein W., Biersack J.P. Z. Phys. B. 63:1986;109.
24. Littlewood S.D., Kilner J.A. J. Appl. Phys. 63:1988;2173.
25. K. Wittmaack, K.-H. Eisenrith, W. Hösler, R. von Criegern, in: M. Foad (Ed.), Ultra Shallow Junctions 2001, Napa Valley, 2001, p. 139.