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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 1, 2002, Pages 441-447

Quantitative analysis of nitrogen in oxynitrides on silicon by MCs+ secondary ion mass spectrometry?

(3) Kataoka, Y a Shigeno, M a Wittmaack, K b

a FUJITSU LABORATORIES LTD (Japan)

b INSTITUTE OF EPIDEMIOLOGY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CESIUM; DIFFUSION; ELLIPSOMETRY; ION BOMBARDMENT; ION IMPLANTATION; NITROGEN; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SPUTTERING; SURFACE ROUGHNESS;

IMPACT ANGLES; OXYNITRIDES;

SEMICONDUCTING SILICON;

EID: 0036118779 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1447250 Document Type: Conference Paper

Times cited : (14)

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