Sputtering yields of compounds using argon ions

Journal of Physics D: Applied Physics

Volumn 43, Issue 25, 2010, Pages

  Seah, M P ^a   Nunney, T S ^b  

^a NATIONAL PHYSICAL LABORATORY   (United Kingdom)

^b Thermo Fisher Scientific   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON ION; ATOMIC NUMBERS; BOND THEORY; DYNAMICAL EQUILIBRIUM; ENERGY DEPENDENCE; EXPERIMENTAL DATA; GAAS; HEAT OF FORMATION; HEAT OF REACTION; LINEAR CASCADE; NEW RESULTS; NORMAL INCIDENCE; OXIDATION PROCESS; PREDICTIVE EQUATIONS; PREFERENTIAL SPUTTERING; PRIMARY IONS; REFERENCE MATERIAL; SEMI-EMPIRICAL; SEMI-EMPIRICAL THEORY; SPUTTERING YIELDS;

ARGON; GALLIUM ALLOYS; GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM; SILICON COMPOUNDS; SPUTTERING; TANTALUM; THERMOCHEMISTRY;

ATOMS;

EID: 77953576224     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/25/253001     Document Type: Review

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