Transient phenomena and impurity relocation in SIMS depth profiling using oxygen bombardment: Pursuing the physics to interpret the data

Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences

Volumn 354, Issue 1719, 1996, Pages 2731-2764

  Wittmaack, K ^a  

^a INSTITUTE OF EPIDEMIOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3042925462     PISSN: 1364503X     EISSN: None     Source Type: Journal    
DOI: 10.1098/rsta.1996.0126     Document Type: Article

References (63)

1. Alay, J. L. & Vandervorst, W. 1992 XPS analysis of ion-beam-induced oxidation of silicon substrates. Surf. Interface Analysis 19, 313-317.
2. Andersen, C. A. 1969 Progress in analytic methods for the ion microprobe mass analyzer. Int. J. Mass Spectrom. Ion Phys. 2, 61-74.
3. Andersen, C. A. 1970 Analytic method for the ion microprobe analyzer. Part II. Int. J. Mass Spectrom. Ion Phys. 3, 413-428.
4. Augustus, P. D., Spiller, G. D. T., Dowsett, M. G., Kightley, P., Thomas, G. R., Webb, R. & Clark, E. A. 1988 Cross-sectional transmission electron microscopy and Auger electron spectroscopy studies of primary beam damage at the bottom of SIMS craters eroded in Si. In Secondary ion mass spectrometry SIMS VI (ed. A. Benninghoven et al.), pp. 485-488. Chichester: Wiley.
5. Avau, D., Vandervorst, W. & Maes, H. E. 1988 Transient effects during SIMS depth profiling with oxygen. Surf. Interface Analysis 11, 522-528.
6. Badheka, R., Wadsworth, M., Armour, D. G., van den Berg, J. A. & Clegg, J. B. 1990 Theoretical and experimental studies of the broadening of dilute delta-doped Si spikes in GaAs during SIMS depth profiling. Surf. Interface Analysis 15, 550-558.
7. Barlow, R. D., Dowsett, M. G., Fox, H. S., Kubiak, R. A. A. & Newstead, S. M. 1992 SIMS response functions for MBE grown delta layers in silicon. Nucl. Instrum. Meth. B 72, 442-446.
8. Beyer, G. P. 1994 A study of ion beam induced artefacts during the SIMS depth profiling of semiconductor matrices. PhD Thesis, University of London.
9. Clegg, J. B. 1987 Depth profiling of shallow arsenic implants in silicon using SIMS. Surf. Interface Analysis 10, 332-337.
10. Clegg, J. B. & O'Connor, D. J. 1981 Evaluation of secondary ion mass spectrometry profile distortions using Rutherford backscattering. Appl. Phys. Lett. 39, 997-999.
11. Clegg, J. B. & Gale, I. G. 1991 SIMS profile simulation using delta function distributions. Surf. Interface Analysis 17, 190-196.
12. Custer, J. S., Thompson, M. O., Jacobson, D. C., Poate, J. M., Roorda, S., Sinke, W. C. & Spaepen, F. 1994 Density of amorphous Si. Appl. Phys. Lett. 64, 437-439.
13. Dowsett, M. G., Jeynes, C., Clark, E. A., Webb, R. & Newstead, S. M. 1990 The redistribution of arsenic and germanium in the altered layer formed during SIMS analysis of silicon. In Secondary ion mass spectrometry SIMS VII (ed. A. Benninghoven et al.), pp. 615-618. Chichester: Wiley.
14. Dowsett, M. G., Barlow, R. D., Fox, H. S., Kubiak, R. A. A. & Collins, R. 1992 Secondary ion mass spectrometry depth profiling of boron, antimony, and germanium deltas in silicon and implications for profile deconvolution. J. Vac. Sci. Technol. B 10, 336-341.
15. Dowsett, M. G., Barlow, R. D. & Allen, P. N. 1994 Secondary ion mass spectrometry analysis of ultrathin impurity layers in semiconductors and their use in quantification, instrumental assessment, and fundamental measurements. J. Vac. Sci. Technol. B 12, 186-198.
16. Eckstein, W. 1989 Quantitative predictions of sputtering phenomena. Surf. Interface. Analysis 14, 799-808.
17. Eckstein, W. & Biersack, J. P. 1986 Reflection of heavy ions. Z. Phys. B 63, 471-478.
18. Eckstein, W., García-Rosales, C., Roth, J. & Ottenberger, W. 1993 Sputtering data. IPP 9/82, Max-Planck-Institut für Plasmaphysik, Garching.
19. Elst, K., Vandervorst, W., Bender, H. & Alay, J. 1994 Study of the altered layer formation under oxygen bombardment in combination with flooding. In Secondary ion mass spectrometry SIMS IX (ed. A. Benninghoven et al.), pp. 617-620. Chichester: Wiley.
20. 2 layer formed by very high dose oxygen implantation. IOP Conf. Ser. 59, 533-538.
21. Kalbitzer, S. & Oetzmann, H. 1980 Ranges and range theories. Rad. Effects 47, 57-72.
22. King, B. V. & Tsong, I. S. T. 1984 A model for atomic mixing and preferential sputtering effects in SIMS depth profiling. J. Vac. Sci. Technol. A 2, 1443-1447.
23. Li, Y., Kilner, J. A., Robinson, A. K., Hemment, P. L. F. & Marsh C. D. 1991 Analysis of thin-film silicon-on-insulator structure formed by low-energy oxygen ion implantation. J. Appl. Phys. 70, 3605-3612.
24. Littmark, U. &: Hofer W. O. 1980 Recoil mixing in solids by energetic ion beams. Nucl. Instrum. Meth. 168, 329-342.
25. Littmark, U. & Hofer, W. O. 1984 The theory of recoil mixing in solids. In Thin film and depth profile analysis (ed. H. Oechsner), pp. 159-200. Berlin: Springer.
26. Morgan, A. E., de Grefte, H. A. M., Warmoltz, N., Werner H. W. & Tolle, H. J. 1981 The influence of bombardment conditions upon the sputtering and secondary ion yields of silicon. Appl. Surf. Sci. 7, 372-392.
27. Naundorf, V., & Abromeit, C. 1989 Limits of depth resolution for sputter sectioning: moments of tracer depth distribution. Nucl. Instrum. Meth. B 43, 513-519.
28. Schulz, F. & Wittmaack, K. 1976 Model calculation of ion collection in the presence of sputtering: I. Zero order approximation. Rad. Effects 29, 31-40.
29. Smith, N. S. 1996 Ultra-low energy SIMS depth profiling. Ph.D. thesis, University of Warwick.
30. Smith, N. S., Dowsett, M. G., McGregor, B. & Phillips, P. 1996 Rapid low energy depth profiling using SIMS. In Secondary ion mass spectrometry SIMS X (ed. A. Benninghoven et al.). Chichester: Wiley.
31. Simons, D. S. 1996 The depth measurement of craters produced by secondary ion mass spectrometry - results of a stylus profilometry round-robin study. In Secondary ion mass spectrometry SIMS X (ed. A. Benninghoven et al.). Chichester: Wiley.
32. Svensson, B. G., Mohadjeri, B. & Perović, M. 1994 Surface recession and oxidation of silicon during bombardment by low energy ions. J. Appl. Phys. 76, 3831-3834.
33. Todorov, S. S. & Fossum, E. R. 1988 Oxidation of silicon by a low-energy ion beam: experiment and model. Appl. Phys. Lett. 52, 48-50.
34. Vancauwenberghe, O. P. J. 1992 On the growth of semiconductor-based epitaxial and oxide films from low energy ion beams. Ph.D. thesis, Massachusetts Institute of Technology.
35. Vancauwenberghe, O., Herbots, N. & Hellman, O. C. 1992 Role of ion energy in ion beam oxidation of semiconductors: experimental study and model. J. Vac. Sci. Technol. A 10, 713-718.
36. Vandervorst, W., Alay, J., Brijs, B., De Coster, W. & Elst, K. 1994 Depth profiling with oxygen beams. In Secondary ion mass spectrometry SIMS IX (ed. A. Benninghoven et al.), pp. 599-608. Chichester: Wiley.
37. Vandervorst, W., Maes, H. E. & De Keersmaker, R. F. 1984 Secondary ion mass spectrometry: depth profiling of shallow As implants in silicon and silicon dioxide. J. Appl. Phys. 56, 1425-1433.
38. Vandervorst, W. & Shepherd, F. R. 1985 Transient effects in SIMS analysis for different angles of incidence of an EMBED primary ion beam. Appl. Surf. Sci. 21, 230-242.
39. Vandervorst, W. & Shepherd, F. R. 1987 Secondary ion mass spectrometry profiling of shallow implanted layers using quadrupole and magnetic sector instruments. J. Vac. Sci. Technol. A 5, 313-320.
40. + yield with angle of incidence and energy of an primary beam. J. Vac. Sci. Technol. A3, 1359-1362.
41. Wach, W. & Wittmaack, K. 1981 Ion implantation and sputtering in the presence of reactive gases: bombardment induced incorporation of oxygen and related phenomena. J. Appl. Phys. 52, 3341-3352.
42. 11B in amorphous and crystalline silicon. Nucl. Instrum. Meth. 194, 113-116.
43. Wach, W. & Wittmaack, K. 1982b Element-specific broadening effects in SIMS depth profiling of light impurities implanted in silicon. Surf. Interface Analysis 4, 230-233.
44. Wach, W. & Wittmaack, K. 1983 Ranges of low-energy, light ions in amorphous silicon. Phys. Rev. B 27, 3528-3537.
45. Wilson, R. G., Stevie, F. A. & Magee, C. W. 1989 Secondary ion mass spectrometry. A practical handbook for depth profiling and bulk analysis. New York: Wiley.
46. Winterbon, B. K. 1975 Ion implantation range and energy deposition distributions. Low incident energies, vol. 2. New York: Plenum.
47. Wittmaack, K. 1977 The use of secondary ion mass spectrometry for studies of oxygen adsorption and oxidation. Surf. Sci. 68, 118-129.
48. Wittmaack, K. 1981 Oxygen-concentration dependence of secondary ion yield enhancement. Surf. Sci. 112, 168-180.
49. Wittmaack, K. 1985 Influence of the impact angle on the depth resolution and the sensitivity in SIMS depth profiling using a cesium ion beam. J. Vac. Sci. Technol. A 3, 1350-1354.
50. Wittmaack, K. 1987 Periodicity of impurity segregation effects in oxygen bombarded silicon. Nucl. Instrum. Meth. B 19/20, 484-487.
51. Wittmaack, K. 1991 Surface and depth analysis based on sputterung. In Sputtering by particle bombardment III (ed. R. Behrisch & K. Wittmaack), pp. 161-256. Berlin: Springer.
52. Wittmaack, K. 1992 Basic aspects of sputter profiling. In Practical surface analysis (Ion and neutral spectroscopy) (ed. D. Briggs & M. P. Seah), 2nd. edn, vol. 2, pp. 105-175. Chichester: Wiley.
53. Wittmaack, K. 1993 Comparison of the resolution functions for depth profiling of boron and antimony in silicon using oxygen bombardment at different energies and implact angles. In Proc. 2nd Int. Workshop Measurement and characterization of ultra-shallow doping profiles in semiconductors (ed. R. Subrahmanyan, C. Osburn & P. Rai-Chouhury), pp. 189-195. Research Triangle Park: MCNC.
54. Wittmaack, K. 1994a Towards the ultimate limits of depth resolution in sputter profiling: beam-induced chemical changes and the importance of sample quality. Surf. Interface Analysis 21, 323-335.
55. Wittmaack, K. 1994b Secondary ion mass spectrometry depth profiling of boron and antimony deltas in silicon: Comparison of the resolution functions using oxygen bombardment at different energies and impact angles. J. Vac. Sci. Technol. B 12, 258-262.
56. Wittmaack, K. 1994c Thickness of SiO2 layers produced by oxygen implantation in Si: a CsAMS depth profiling study. In Secondary ion mass spectrometry SIMS IX (ed. A. Benninghoven et al.), pp. 394-397. Chichester: Wiley.
57. Wittmaack, K. 1996a Sputtering yield changes, surface movement and apparent profile shifts in SIMS depth analyses of silicon using oxygen primary ions. Surf. Interface Analysis 24, 389-398.
58. Wittmaack, K. 1996b Angular dependence of sputtering yields and broadening of Ge distributions in Si using oxygen primary ions at different energies. (In preparation.)
59. Wittmaack, K. & Poker, D. B. 1990 Interface broadening in sputter profiling through alternating layers of isotopically purified silicon. Nucl. Instrum. Meth. B 47, 224-235.
60. Wittmaack, K. & Wach, W. 1981 Profile distortions and atomic mixing in SIMS analysis using oxygen primary ions. Nucl. Instrum. Meth. 191, 327-334.
61. Yu, M. L. 1991 Charged and excited states of sputtered atoms. In Sputtering by particle bombardment III (ed. R. Behrisch & K. Wittmaack), pp. 91-160. Berlin: Springer.
62. Zalm, P. C., Vriezema, C. J., Gravesteijn, D. J., van de Walle, G. F. A & de Boer, W. B. 1991 Facts and artefacts in the characterization of Si-SiGe multilayers with SIMS. Surf. Interface Analysis 17, 556-566.
63. Ziegler, J. F., Biersack, J. P. & Littmark, U. 1985 The stopping and range of ions in solids, vol. 1. New York: Pergamon.