Transient effects noted during Cs + depth profile analysis of Si at high incidence angles

Applied Surface Science

Volumn 203-204, Issue , 2003, Pages 306-309

  Van der Heide, P A W ^a   Bennett, J ^b  

^a University of Houston   (United States)

^b SEMATECH   (United States)

Author keywords

Depth profiling; SIMS; Transient effects

Indexed keywords

CESIUM; ELECTRIC POTENTIAL; ION BEAMS; OXIDES; SECONDARY ION MASS SPECTROMETRY;

PRIMARY ION ENERGY;

SILICON WAFERS;

EID: 12244291882     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00665-7     Document Type: Conference Paper

References (5)

1. T. Hoshi, M. Kudo, SIMS, Vol. XII, Wiley, New York, 2000, 549 pp.
2. G.R. Mount, C.J. Hitzman, S.P. Smith, Proceedings of the SIMS, Vol. XI, Wiley, New York, 1998, 317 pp.
3. P.A.W. van der Heide, M.S. Lim, S.S. Perry, J. Bennett, Nucl. Instrum. Meth. Phys. Res. B, in press.
4. P.A.W. van der Heide, Nucl. Instrum. Meth. Phys. Res. B, in press.
5. P.A.W. van der Heide, J. Bennett, M.S. Lim, S.S. Perry, Appl. Surf. Sci., in press.