Sputtering yield changes, surface movement and apparent profile shifts in SIMS depth analyses of silicon using oxygen primary ions

Surface and Interface Analysis

Volumn 24, Issue 6, 1996, Pages 389-398

  Wittmaack, K ^a  

^a INSTITUTE OF EPIDEMIOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ION IMPLANTATION; MODIFICATION; OXYGEN; SECONDARY ION MASS SPECTROMETRY; SPUTTERING; SURFACE PHENOMENA;

BOMBARDMENT FLUENCE; DEPTH ANALYSES; EXTRAPOLATED ZERO FLUENCE SURFACE POSITION; PROFILE SHIFTS; SPUTTERING YIELD CHANGES; SURFACE MOVEMENT; SURFACE RECESSION;

SILICON;

EID: 0030169832     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1096-9918(199606)24:6<389::AID-SIA135>3.0.CO;2-L     Document Type: Article

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